Muttakim, Andira (2014) PENGARUH KONSENTRASI PENDADAH NIOBIUM PADA LAPISAN n-LiTaO3 TERHADAP SIFAT LISTRIK FOTODIODE p-Si / n-LiTaO3:Nb YANG DIBUAT DENGAN METODE CHEMICAL SOLUTION DEPOSITION TEKNIK SPIN COATING. S1 thesis, Universitas Pendidikan Indonesia.
Abstract
Telah dibuat prototipe fotodiode p-Si / n-LiTaO3:Nb dengan variasi pendadah Nb dengan konsentrasi 0 %, 2.5 %, 5 %, dan 7.5 %. Deposisi LiTaO3:Nb di atas p-Si dilakukan dengan metode Chemical Solution Deposition (CSD) menggunakan teknik Spin Coating. Massa molar LiTaO3:Nb adalah 1,00 M dengan pelarut 2-Methoxyethanol. Fotodiode p-Si / n-LiTaO3:Nb dipanaskan (annealed) pada temperatur konstan sebesar 1000 °C selama delapan jam. Temperatur dinaikkan dari temperatur ruang hingga 1000 °C selama satu jam. Karakteristik I-V pada fotodiode p-Si / n-LiTaO3:Nb diukur dengan menggunakan alat Keithley I-V meter dalam keadaan tanpa penyinaran dan dengan penyinaran untuk menentukan nilai photocurrent, breakdown voltage, dan shunt resistance. Hasil penelitian menunjukkan fotodiode p-Si / n-LiTaO3:Nb yang dibuat masih belum bisa memenuhi karakteristik fotodiode yang telah beredar di pasaran. Nilai photocurrent, breakdown voltage, dan shunt resistance untuk fotodiode yang beredar di pasaran memiliki nilai sekitar 100 μA, 50-100 V, dan 10-1000 MΩ, sedangkan dalam penelitian ini nilai optimumnya masing-masing hanya 2.73 μA, 4.95 V, dan 0.23 MΩ. Pada fotodiode p-Si / n-LiTaO3:Nb, nilai photocurrent cenderung menurun seiring dengan penambahan konsentrasi Nb hingga 5 %, nilai photocurrent meningkat kembali ketika konsentrasi Nb ditambahkan menjadi 7.5 %. Nilai breakdown voltage pada fotodiode meningkat seiring dengan penambahan konsentrasi Nb hingga 5 %, nilai breakdown voltage menurun kembali ketika konsentrasi Nb ditambahkan menjadi 7.5 %. Nilai shunt resistance meningkat seiring dengan bertambahnya konsentrasi Nb hingga konsentrasi 7.5 %. Kata kunci:fotodiode, silikon tipe-p, litium tantalat, niobium, karakteristik I-V. Prototype p-Si / n-LiTaO3:Nb photodiode has been made with 0 %, 2.5 %, 5 %, and 7.5 % Nb doped concentrations. LiTaO3:Nb was deposited on the top of p-Si by Chemical Solution Deposition (CSD) method, using Spin Coating technique. LiTaO3:Nb has molar mass 1.00 M with 2-Methoxyethanol solvent. Anneal has been done at constant temperature of 1000 °C for eight hours. The temperature was raised from room temperature to 1000 °C for one hour. I-V characteristic of p-Si / n-LiTaO3:Nb photodiode was measured by using Keithley I-V meter in darken and illuminated condition to determine the value of photocurrent, breakdown voltage, and shunt resistance. The results show that p-Si / n-LiTaO3:Nb photodiode still cannot meet photodiode characteristics that have been commercialized in the market. For photodiode in the market, it has photocurrent, breakdown voltage, and shunts resistance value about 100 μA, 50-100 V, and 10-1000 MΩ respectively, whilst this study only has these value of 2.73 μA, 4.95 V, and 0.23 MΩ respectively. In p-Si / n-LiTaO3:Nb photodiode, photocurrent value decreases along with addition of Nb concentration up to 5 %, photocurrent value increases when the Nb concentration was increased to 7.5 %. Breakdown voltage value increases along with addition of Nb concentration up to 5 %, Breakdown voltage value decreases when the Nb concentration was increased to 7.5 %. Shunt resistance value increases along with addition of Nb concentration up to 7.5 %. Keywords: Photodiode, type-p silicon, lithium tantalate, niobium, I-V characteristic.
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| Item Type: | Thesis (S1) |
|---|---|
| Subjects: | Universitas Pendidikan Indonesia > Fakultas Pendidikan Matematika dan Ilmu Pengetahuan Alam > Program Studi Fisika - S1 > Program Studi Fisika (non kependidikan) |
| Divisions: | Fakultas Pendidikan Matematika dan Ilmu Pengetahuan Alam > Program Studi Fisika - S1 > Program Studi Fisika (non kependidikan) |
| Depositing User: | Riki N Library ICT |
| Date Deposited: | 19 Feb 2014 04:40 |
| Last Modified: | 19 Feb 2014 04:40 |
| URI: | http://repository.upi.edu/id/eprint/6442 |
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