PEMODELAN ARUS TEROBOSAN PADA TRANSISTOR EFEK MEDAN TEROBOSAN BILAYER ARMCHAIR GRAPHENE NANORIBBON MENGGUNAKAN METODE MATRIKS TRANSFER

Muhammad Fulki Fadhillah, - (2019) PEMODELAN ARUS TEROBOSAN PADA TRANSISTOR EFEK MEDAN TEROBOSAN BILAYER ARMCHAIR GRAPHENE NANORIBBON MENGGUNAKAN METODE MATRIKS TRANSFER. S1 thesis, Universitas Pendidikan Indonesia.

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Abstract

ABSTRAK Transistor efek medan terobosan (TFET) merupakan salah satu divais elektronik yang menunjukan perkembangan yang serius. Arus terobosan pada transistor efek medan berbasis BAGNR dimodelkan dengan metode semi-numerik. Profil potensial transistor efek medan dibagi kedalam beberapa segmen pada metode numerik. Metode Matriks Transfer (MMT) merupakan metode numerik yang digunakan pada perhitungan nilai transmitansi elektron. Hasil perhitungan nilai transmitansi elektron dengan metode MMT, arus terobosan diperoleh dari formula Landauer dengan bantuan metode Gauss Legendre Quadratur (GLQ). Arus terobosan dihitung dengan mengubah sejumlah variabel, yaitu tegangan gerbang (VG), tegangan penguras (VD), suhu, lebar BAGNR dan ketebalan lapisan oksida. Pada penelitian ini juga dilakukan perhitungan terhadap cut-off frequency pada transistor efek medan terobosan. Hasil perhitungan arus terobosan menunjukan bahwa semakin besar nilai VG dapat mempengaruhi arus saturasi. Hasil perhitungan arus terobosan menunjukan bahwa semakin tinggi suhu, maka semakin rendah nilai arus terobosan. Hasil perhitungan arus terobosan juga menunjukan bahwa semakin lebar AGNR maka arus terobosan semakin besar, hal ini disebabkan oleh pengaruh lebar AGNR yang membuat celah energi (Eg) semakin rendah. Nilai cut-off frequency pada transistor efek medan terobosan berbahan BAGNR yang tercatat pada penelitian ini adalah 3.96-8.68 THz. Kata kunci: arus terobosan, transistor efek medan terobosan, BAGNR, MMT, cut-off frequency ABSTRACT Tunneling field effect transistor (TFET) is one electronic device that shows serious development. A tunneling current in BAGNR-based field effect transistors is modeled by semi-numeric methods. Potential profiles of field effect transistors are divided into several segments in numerical methods. The Transfer Matrix Method (MMT) is a numerical method used in calculating electron transmittance values. The results of the calculation of electron transmittance values by the MMT method, the tunneling current was obtained from the Landauer formula with the help of the Gauss Legendre Quadratur (GLQ) method. tunneling current is calculated by changing a number of variables, namely gate voltage (VG), drainage voltage (VD), temperature, width of BAGNR and thickness of the oxide layer. In this study, the calculation of the cut-off frequency on the tunneling field effect transistor was also carried out. The results of the tunneling current calculation show that the greater the value of VG can affect the saturation current. The results of the tunneling current calculation show that the higher the temperature, the lower the breakthrough current value. The calculation of the tunneling current also shows that the wider the BAGNR, the greater the tunneling current, this is due to the influence of BAGNR width which makes the energy gap (Eg) lower. The value of the cut-off frequency on the tunnelling field effect transistor BAGNR recorded in this study is 3.96-8.68 THz. Keywords: tunneling current, tunneling field effect transistor, BAGNR, MMT, cut-off frequency

Item Type: Thesis (S1)
Additional Information: No. Panggil : S FIS MUH p-2019 ; Pembimbing : I. Endi Suhendi, II. Dadi Rusdiana ; NIM : 1504791
Uncontrolled Keywords: arus terobosan, transistor efek medan terobosan, BAGNR, MMT, cut-off frequency
Subjects: L Education > L Education (General)
Q Science > QC Physics
Divisions: Fakultas Pendidikan Matematika dan Ilmu Pengetahuan Alam > Jurusan Pendidikan Fisika > Program Studi Fisika (non kependidikan)
Depositing User: Muhammad Fulki Fadhillah
Date Deposited: 23 Jul 2019 01:37
Last Modified: 23 Jul 2019 01:37
URI: http://repository.upi.edu/id/eprint/36216

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